Analytical and Implantation Services for external users
We offer the following analytical and implantation services for external users
please contact us for availabilty and quotation
- Conventional Rutherford backscattering element analysis of thin fillms
- sensitivity down to 0.1 % or 1·1014 cm-2
- analysis of heavier elements starting from B
- depth resolution about 10 nm - Rutherford backscattering element analysis of thin fillms using MeV protons with external beam
- analysis of light elements elements starting like B,N,O
- depth resolution about 100 nm - High resolution Rutherford backscattering element analysis of thin films
- sensitivity down to 0.1 % or 1·1014 cm-2
- analysis of heavier elements starting from B
- depth resolution about 1-2 nm in surface near regions
- sample size about 1mm2 to 1 cm2 - PIXE element analysis using MeV proton beams
--- proton induced X-ray emission ---
- sensitivity down to several 10 ppm
- analysis of all ements starting from Na
- no depth resolution, anayzed thickness about 10-20 µm
- analyzed sample area 1mm2
- analysis time up to 2 minutes
- no sample preparation is needed. We extract the protons into air of He atmosphere.
- samples must be at least 1mm2 in diameter an can be very large
- examples: coins, minerals, paintings, etal pieces, ceramics, jewellery, ..... - PIGE element analysis of Fluorine using MeV proton beams
- sensitivity down to several 100 ppm
- analysis thrpugh detection of gamma radiation
- no depth resolution, anayzed thickness about 10-20 µm
- analyzed sample area 1mm2
- analysis time up to several minutes
- no sample preparation is needed. We extract the protons into air of He atmosphere.
- samples must be at least 1mm2 in diameter an can be very large
- examples: everything which might contain Fluorine - Light element depth profiling using a 2.5 MeV external proton beam
- analysis of B, C, N, O with Non-rutherford backscattering
- up to 100 times more sensitive compared to Rutherfordscattering with He
- beam spot ca. 1 mm2
- analysis depth up to 15 µm with resolution of few hundered nm
- H profiling by Nuclear Reaction Analysis
- analysis with 6.3 - 6.6 MeV 15N ion beam
- sensitivity down to several ppm
- depth resolution about 10 nm
- sample size about 1 cm2 - H profiling in µm thick films by Coincidence ERDA with MeV external proton beam
- analysis with 2-3 MeV proton ion beam
- depth resolution about 100 nm
- analysis of free standing films or samples with thickness up to 10 µm
- beam spot size about 1 mm2 - Ultra-low energy ion irradiation and ion implantation with mass selected ions
- energies from 30 keV down to 10 - 20 eV
- nearly all ions, except Al,Si
- available ion species: H,B,C,N,O,F,Ne,Ar,P,S,Mn,Se,Au,W and more
- Fluences up to 1019 ions/cm2, typical fluence for 2D materials 1015 ions/cm2
- sample size up to 18x18 mm2
- implantation of TEM grids possible - Surface analysis using Auger spectroscopy
- Electron energy 1 - 3 keV
- sample size up to 18x18 mm2
- analyzed area ca. 1 mm
- sample transfer into UHV - Ion implantation
- ion energies up to 900 keV at ion implanter
- ion energies up to 9 MeV at Tandem accelerator
- nearly all ions
- implantated area up to 2x2 cm2
- implantation at low Temperature (liquid nitrogen) possible - Low level gamma spectroscopy
- analysis of low activities down to < 1 Bq/l for the isotpes
- Cs-137, K-40, Co-60, Na-22
- see page " Radioisotopes and environmental radioactivity" - Atomic force microscopy
PARK Systems XE-100
- surface topography analysis
- surface conductivity analysis using a conductive tip