AG Hofsäss - II- Institute of Physics

Publications 2023

Optical Properties of MoSe₂ Monolayer Implanted with Ultra-Low-Energy Cr Ions
Minh N. Bui, Stefan Rost, Manuel Auge, Lanqing Zhou, Christoph Friedrich, Stefan Blügel, Silvan Kretschmer, Arkady V. Krasheninnikov, Kenji Watanabe, Takashi Taniguchi, Hans C. Hofsäss, Detlev Grützmacher, and Beata E. Kardynal, ACS Appl. Mater. Interfaces 2023, doi 10.1021/acsami.3c05366
Low energy ion-solid interactions: a quantitative experimental verification of binary collision approximation simulations
Hans Hofsäss, Felix Junge, Patrick Kirscht and Koen Karl Frans van Stiphout, Material Research Express (2023) DOI 10.1088/2053-1591/ace41c
Lateral Controlled Doping and Defect Engineering of Graphene by Ultra-Low-Energy Ion Implantation
Felix Junge, Manuel Auge, Zviadi Zarkua and Hans Hofsäss, Nanomaterials 13 (2023) 65
Bond defects in graphene created by ultralow energy ion implantation
Renan Villarreal, Pin-Cheng Lin, Zviadi Zarkua, HarshBana, Hung-Chieh Tsai, Manuel Auge, Felix Junge, HansHofsäss, Ezequiel Tosi, Paolo Lacovig, Silvano Lizzit, StevenDe Feyter, Stefan De Gendt, Steven Brems, E. Harriet Ahlgren, and Lino M. C. Pereira, Carbon 203 (2023) 590

Publications 2022

Room‐Temperature ¹⁸¹ Ta(TiO₂ ): An e‐γ TDPAC Study
Ian Chang Jie Yap, Juliana Schell, Thien Thanh Dang, Cornelia Noll, Reinhard Beck, Ulli Köster, Ronaldo Mansano and Hans Christian Hofsäss
Crystals 2022, 12, 946
Thermal Annealing of Graphene Implanted with Mn at Ultra-Low Energies: From Disordered and Contaminated to Nearly Pristine Graphene
Lin, Pin-Cheng; Villarreal, Renan; Bana, Harsh; Zarkua, Zviadi; Hendriks, Vince; Tsai, Hung-Chieh; Auge, Manuel; Junge, Felix; Hofsäss, Hans; Tosi, Ezequiel; Lacovig, Paolo; Lizzit, Silvano; Zhao, Wenjuan; Di Santo, Giovanni; Petaccia, Luca; De Feyter, Steven; De Gendt, Stefan; Brems, Steven; Pereira, Lino M.C.
The Journal of Physical Chemistry 126 (2022) 10494
Low-energy Se ion implantation in MoS₂ monolayers
Minh Bui, Stefan Rost, Manuel Auge, Jhih-Sian Tu, Lanqing Zhou, Irene Aguilera, Stefan Blügel, Mahdi Ghorbani-Asl, Arkady Krasheninnikov, Arsalan Hashemi, Hannu-Pekka Komsa, Lei Jin, Lidia Kibkalo, Eoghan O'Connell, Quentin Ramasse, Ursel Bangert, Hans Hofsäss, Detlev Grützmacher, and Beata Kardynal, Nature Partner Journals 2D materials and applications 6 (2022) 42
Introducing Ultra-Low Energy Ion Implantation of Radioactive Isotopes at ISOLDE, CERN for (Near-)Surface Characterization: the ASPIC and ASCII Vacuum Chambers
Koen van Stiphout, Leonard-Alexander Lieske, Manuel Auge, Hans Hofsäss, Crystals 12 (2022) 626
Anomalies at the Dirac point in graphene and its hole-doped compositions
Arindam Pramanik, Sangeeta Thakur, Bahadur Singh, Philip Willke, Martin Wenderoth, Hans Hofsäss, G. Di Santo, Luca Petaccia, and Kalobaran Maiti
Physical Review Letters 128 (2022) 166401
Low temperature gaseous nitriding of Co-Cr alloys: Formation and decomposition of expanded phase
Maryam Akhlaghi, Rainer Hock, Johannes Dallmann, Anna Krapf, Benoit Merle, Hans Hofsäss, Carolin Körner and Andreas Leineweber,
J. alloys and compounds 907 (2022) 164535.
Binary collision approximation simulations of ion solid interaction without the concept of surface binding energies
H. Hofsäss and A. Stegmaier, Nucl. Instr. Meth B 517 (2022) 49-62
Quantitative light element analysis: Complementary IBA methods for H to O detection using an external proton beam
F. Junge, P. Kirscht, H. C. Hofsäss, Nucl. Instr. Meth. B 517 (2022) 16-23
Sputter hot filament hollow cathode ion source and its application to ultra-low energy ion implantation in 2D materials
F. Junge, M. Auge, H. Hofsäss, Nucl. Instr. Meth. B 510 (2022) 63-68
Laterally controlled ultra-low energy ion implantation using electrostatic masking
M. Auge, F. Junge, H. Hofsäss, Nucl. Instr. Meth.B 512 (2022) 96-101

Publications 2021>

Device for generating negative ions by impinging positive ions on a target
H. Hofsäss, F. Lipp Bregolin, D. Yordanov, US patent 11,031,205, 08.06.2021
Doping Graphene with Substitutional Mn
P.C. Lin, R. Villarreal, S. Achilli, H. Bana, M.N. Nair, A. Tejeda, K. Verguts, S. De Gendt, M. Auge, H. Hofsäss, S. De Feyter, G. Di Santo, L. Petaccia, S. Brems, G. Fratesi, L.M.C. Pereira, ACS Nano 15 (2021) 5449
Breakdown of Universal Scaling for Nanometer-Sized Bubbles in Graphene
R. Villarreal, P.-C. Lin, F. Faraji, N. Hassani, H. Bana, Z. Zarkua, M. N. Nair, H.-C. Tsai, M. Auge, F. Junge, H. C. Hofsäss, S. De Gendt, S. De Feyter, S. Brems, E. H. Åhlgren, E. C. Neyts, L. Covaci, F. M. Peeters, M. Neek-Amal, and L. M. C. Pereira, Nano Lett. 21 (2021) 8103

Publications 2020>

A comprehensive study of charge transport in Au-contacted graphene on Ge/Si(001)
A. Sinterhauf, S. Bode, M. Auge, M. Lukosius, G. Lippert, H.C. Hofsäss, M. Wenderoth, Appl. Phys. Lett 117 (2020) 023104
Upconversion photoluminescence of Ho³⁺-Yb³⁺ doped barium titanate nanocrystallites: Optical tools for structural phase detection and temperature probing
M. K. Mahata, T. Koppe, K. Kumar, H. Hofsäss, U. Vetter, Scientific Reports 10 (2020) 8775
Using radioactive beams to unravel local phenomena in ferroic and multiferroic materials
J. Schell, H. Hofsass, D.C. Lupascu, Nucl. Instr. Meth B 463 (2020) 134

Publications 2019

A hyperfine look at titanium dioxide
J. Schell, D. Zyabkin, D.C. Lupascu, H.C. Hofsäss, M.O. Karabasov, A. Welker, P. Schaaf, AIP Advances 9 (2019) 085208
Prediction of ion-induced nanopattern formation using Monte Carlo simulations and comparison to experiments
H. Hofsäss and O. Bobes, Appl. Phys. Reviews 6 (2019) 021307
Using radioactive beams to unravel local phenomena in ferroic and multiferroic materials
J. Schell, H. Hofsäss, D. C. Lupasco, Nucl. Instr. Meth B 463 (2020) 134<\punkt>
Development of external coincidence ERDA: Hydrogen analysis of moist samples
M. Saito, K. Holm, F. Bregolin, H. Hofsäss, Nucl. Instr, Meth B. 450 (2019) 304
External RBS/PIXE analysis for evaluating quantum dots internalization into HeLa cells
M. Saito, S. Koike, K. Holm, F. L. Bregolin, H. Hofsäss, Nucl. Instr. Meth B 450 (2019) 173

Publications 2018

Temporal evolution on SiO2 surface under low energy Ar+-ion bombardment: Roles of sputtering, mass redistribution, and shadowing
Kumar, Mohit; Datta, D. P. ; Basu, Tanmoy ; Garg , Sandeep; Hofsaess, Hans; Som, T, J.Phys. Cond. Matter (2018), 30 (2018) 334001,
External RBS analysis setup at University of Göttingen: RBS analysis for liquid samples
M. Saito, K. Holm, H. Hofsäss, Surface and Interface Analysis 50 (2018) 1149
Neon ion beam induced pattern formation on amorphous carbon surfaces
H. Hofsäss, K. Zhang, O.Bobes, AIP Advances 8 (2018) 025205
Local Plasmon Engineering in Doped Graphene
F.S. Hage, T.P. Hardcastle, M.N. Gjerding, D.M. Kepaptsoglou, C.R. Seabourne,K. Winther, R. Zan, J. Amani, H. Hofsaess, U. Bangert, K.S. Thygesen, Q.M. Ramasse, ACS Nano 12 (2018) 1837
Evaluation of the radiation hazard for ion beam analysis using external proton beams
H. Hofsäss, Nucl. Instr. Meth B 427 (2018) 53-59

Publications 2017

Ion beam modification of 2D materials - single implant atom analysis via annular dark field electron microscopy
U. Bangert, A. Stewart, E. O'Connell, E. Courtney, Q. Ramasse, D. Kepatsoglou, H. Hofsäss, J. Amani, S. S. Tu, B. Kardynal, Ultramicroscopy 175 (2017), 021013
Single atom spectroscopy of phosphorous dopants implanted into graphene
Toma Susi,Trevor P. Hardcastle,Hans Hofsäss, Andreas Mittelberger, Timothy J. Pennycook, Clemens Mangler,Rik Drummond-Brydson, Andrew J. Scott,Jannik C. Meyer, and Jani Kotakoski, 2D Mater. 4 (2017) 021013
Quadrupole lens alignment with improved STIM and secondary electron imaging for Proton Beam Writing
S. Qureshi, P.S. Raman, A. Stegmaier, J. A. van Kan, Nucl. Instr. Meth. B 404 (2017) 74-80

Publications 2016

Temporal evolution of Ge surface topography under keV ion irradiation: Synergetic roles of curvature-dependent sputter erosion and atomic redistribution
D. P. Datta, S. K. Garg, T. Basu, B. Satpati, H. Hofsäss, D. Kanjilal, and T. Som, Appl. Surf. Sci 360 (2016) 131.
Ar ion beam induced surface pattern formation on Si
H. Hofsäss, O. Bobes, K. Zhang, J. Appl. Phys. 119 (2016) 035302
Nanoscale patterns produced by self-sputtering of solid surfaces: The effect of ion implantation
R.M. Bradley and H. Hofsäss, J. Appl. Phys. 120 (2016), 074302.
Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots
C. Rothfuchs, N. Kukharchyk, T. Koppe, M. Leroux, F. Semond,.S. Blumenthal, H.-W. Becker, D. J. As, H. C. Hofsäss, A. D. Wieck, A. Ludwig, Nucl. Instr. Meth. B 383 (2016) 1
Conducting ion tracks generated by charge-selected swift heavy ions
S. Gupta, H.G. Gehrke , J. Krauser, C. Trautmann, D. Severin, M. Bender, H. Rothard, H. Hofsäss, Nucl. Instr. Meth B 381 (2016) 76
Overview of band-edge and defect related luminescence in aluminum nitride
T. Koppe, H. Hofsäss, U. Vetter, J. Luminescence 178 (2016) 267
Photon-Upconverting Materials: Advances and Prospects for Various Emerging Applications
M. K. Mahata, H. Hofsäss, and U. Vetter, accepted for publication in "Luminescence" (Editor J. Thirumalai) ISBN 978-953-51-4864-7
Self-organized surface ripple pattern formation by ion implantation
H. Hofsäss, K. Zhang, O. Bobes, J. Appl. Phys 120 (2016) 135308
Demonstration of Temperature Dependent Energy Migration in Dual-Mode YVO4:Ho3+/Yb3+ Nanocrystals for Low Temperature Thermometry
M. K. Mahata, T. Koppe, K. Kumar, H. Hofsäss, U. Vetter, Scientific Reports6 (2016), 36342
Photon-Upconverting Materials: Advances and Prospects for Various Emerging Applications
M. K. Mahata, H. Hofsäss, and U. Vetter, in "Luminescence - An Outlook on the Phenomena and their Applications", Editor J. Thirumalai, Intech open science, 2016, ISBN 978-953-51-2763-5

Publications 2015

Host Sensitized Luminescence and Time-Resolved Spectroscopy of YVO4: Ho3+ Nanocrystals
Manoj Kumar Mahata, Tristan Koppe, Hans Hofsäss, Kaushal Kumar, Ulrich Vetter, Physics Procedia 76 (2015) 125.
Electrical conduction of ion tracks in tetrahedral amorphous carbon: Temperature, field and doping dependence and comparison with matrix data
J Krauser, H-G Gehrke, H Hofsäss, J Amani, C Trautmann, and A Weidinger, New J. Phys. 17 (2015) 123009.
Electronic structure modification of ion implanted graphene: the spectroscopic signatures of p- and n-type doping
D.M. Kepaptsoglou, T.P. Hardcastle, C.R. Seabourne, U. Bangert, R. Zan, J. Amani, H. Hofsäss, R.J. Nicholls, R. Brydson, A.J. Scott and Q.M. Ramasse, ACS Nano (2015) DOI 10.1021/acsnano.5b05305
Mössbauer Spectroscopy study of Surfactant Sputtering induced Fe Silicide formation on a Si surface
C. Beckmann, K. Zhang, H. Hofsäss, C. Brüsewitz, U. Vetter and K. Bharuth-Ram, Appl. Surf. Sci. 357 A (2015) 493.
Instability of ferromagnetic nanoclusters in Fe implanted amorphous SiO2
K. Bharuth-Ram, T. B. Doyle, K. Zhang, H. Masenda and H. Hofsäss, Physics Procedia, ISM 2015 proceedings, Procedia 75 (2015) 565-571.
Analysis of immittance spectra: Finding unambiguous electrical equivalent circuits to represent the underlying physics
Julian Alexander Amani, Tristan Koppe, Hans Hofsäss, and Ulrich Vetter, Physical Review Aplied 4 (2015) 044007.
Incorporation of Zn2+ ions into BaTiO3 :Er3+ /Yb3+ nanophosphor: an effective way to enhance upconversion, defect luminescence and temperature sensing
M. K. Mahata, T. Koppe, T. Mondal, C. Brüsewitz, K. Kumar, V. K. Rai, H. Hofsäss and Ulrich Vetter, Phys. Chem. Chem. Phys. 17 (2015) 20741-20753
Doping of Graphene by Low-Energy Ion Beam Implantation: Structural, Electronic and Transport Properties
Philip Willke, Julian A. Amani, Anna Sinterhauf, Sangeeta Thakur , Thomas Kotzott, Steffen Weikert, Kalobaran Maiti, Hans Hofsäss, Martin Wenderoth, Nano Letters 15 (2015) 5110.
Tests of the Modified Sigmund Model of Ion Sputtering using Monte Carlo Simulations
H. Hofsäss, R. M. Bradley, J. Appl. Phys. 117 (2015) 174310
Model for roughening and ripple instability due to ion-induced mass redistribution [Addendum to H. Hofsäss, Appl. Phys. A 114 (2014) 401, ?Surface instability and pattern formation by ion-induced erosion and mass redistribution?]
H. Hofsäss, Appl. Phys. A 119 (2015) 687
Determination of gradient elastic tensors: stress and strain dependencies of electric field gradients in cubic and hexagonal systems
C. Brüsewitz, U. Vetter, H. Hofsäss, J. Phys.: Cond. Matter 27 (2015) 055401.

Publications 2014

Identifying and object in a forgery proof way
H. Hofsäss, K. Zhang, O. Bobes, M. Nagl, US Patent 14/190,773, EFS ID 18310557, 26.2.2014
Designing Si surface nanopatterns by low energy ion beams with metal surfactant sputtering
K. Zhang, O. Bobes, H. Hofsäss, Nanotechnology 25 (2014) 085301
Modeling electrochemical etching of proton irradiated p-GaAs for the design of MEMS building blocks
T. Koppe, C. Rothfuchs, M. Schulte-Borchers, H. Hofsaess, H. Boudinov, U. Vetter, IEEE Journal of Microelectromechanical Systems, 2014
A Modification to the Sigmund Model of Ion Sputtering
R. M. Bradley, H. Hofsäss, J. Appl. Phys. 116 (2014) 234304
Short-range ordering of ion-implanted nitrogen atoms in SiC-graphene
P. Willke, J. A. Amani, S. Thakur, S. Weikert, T. Druga, K. Maiti, H. Hofsäss, and M. Wenderoth, Appl. Phys. Lett. 105 (2014) 111605
Stopping power of liquid water for carbon ions in the energy range between 1 MeV and 6 MeV
J. Rahm, W. Y. Baek, H. Rabus, H. Hofsäss, Physics in Medicine and Biology 59 (2014) 3683
Simulation of ion beam sputtering with SDTrimSP, TRIDYN and SRIM
H. Hofsäss, K. Zhang, A. Mutzke, Appl. Surf. Sci. 310 (2014) 134.
Perturbed angular correlation studies of uniaxial compressive stressed zinc, titanium, rutile, Ti2AlN, and Nb2AlC
C. Brüsewitz, U. Vetter, H. Hofsäss and M.W. Barsoum, Journal of Physics: Condensed Matter 26 (2014) 295501
Surface instability due to ion-induced mass transport and erosion
H. Hofsäss, Appl. Phys. A 114 (2014) 401-422

Publications 2013

Surface instability due to ion-induced mass transport and erosion
H. Hofsäss, Appl. Phys. A (2013), open access DOI: 10.1007/s00339-013-8170-9
Ion implantation of graphene - towards IC compatible technologies
U. Bangert, W. Pierce, D. M. Kepaptsoglou, Q. Ramasse, R. Zan, M. H. Gass, J. Van den Berg, C. Boothroyd, J. Amani, H. Hofsäss, Nano Letters 13 (2013) 49029
Propagation of ripple patterns on Si during ion bombardment
H. Hofsäss, K. Zhang, H.G. Gehrke, C. Brüsewitz, Phys. Rev. B 88 (2013) 0754269
Investigation of the effect of low energy ion beam irradiation on monolayer graphene
Yijun Xu, Kun Zhang, C.Brüsewitz, X. Wu, H. Hofsäss, AIP Advances 3, 072120 (2013).9
Single crystal pillar microcompression tests of the MAX phases Ti2InC and Ti4AlN3
C. Brüsewitz; I. Knorr; H. Hofsäss; M. W. Barsoum; C. A.Volkert, Scripta Materialia 69 (2013) 3039
A new tool for the search of nuclear decay cascades with specific properties based on the Evaluated Nuclear Structure Data Files
M. A. Nagl, M.A. Barbosa, U. Vetter, J. G. Correia, H. C. Hofsäss, Nucl. Instr. Meth A 726 (2013) 179
Conductive tracks of 30 MeV C60 clusters in doped and undoped tetrahedral amorphous carbon
J. Krauser, H.-G. Gehrke, H. Hofsäss, C. Trautmann, A. Weidinger, Nucl. Instr. Meth. B 307 (2013) 265.9
Enhanced resputtering and asymmetric interface mixing in W/Si multilayers
C. Eberl, T. Liese, F. Schlenkrich,F. Döring, H. Hofsäss, H.-U. Krebs, Appl. Phys. A , DOI 10.1007/s00339-013-7587-59
Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties
M. Popovi?, M. Novakovi?, A. Traverse, K. Zhang, N. Bibic, H. Hofsäss, and K. P. Lieb, Thin Solid Films 531 (2013) 1899
Is sputtering relevant for ion-induced self-organized pattern formation?
Hans Hofsäss, Omar Bobes and Kun Zhang , CAARI 2012 AIP Conf. Proceedings 1525, 21st Int. Conf. on the Application of Accelerators in Research & Industry (CAARI), Floyd D. McDaniel and Barney L. Doyle (Editors), 2013, 386-391; doi:http://dx.doi.org/10.1063/1.48023569
The role of phase separation for self-organized surface pattern formation by ion beam erosion and metal co-deposition
H. Hofsäss, K. Zhang, A. Pape, O. Bobes, and M. Brötzmann, Appl. Phys. A: Materials Science and Processing 111 (2013), 653-664; DOI 10.1007/s00339-012-7285-89

Publications 2012

Conductivity enhancement of ion tracks in tetrahedral amorphous carbon by doping
J. Krauser, A.-K. Nix, H.-G. Gehrke, H. Hofsäss, C. Trautmann, A. Weidinger, Nucl. Instr. Meth B 272 (2012) 280
3D microstructuring in p-GaAs with proton beam writing using multiple ion fluences
M.Schulte-Borchers, U. Vetter, T. Koppe and H. Hofsäss, J. Micromech. Microeng. 22 (2012) 025011
Sharp transition from ripple patterns to a flat surface for ion beam erosion of Si with simultaneous co-deposition of iron
Kun Zhang, Marc Brötzmann, Hans Hofsäss, AIP Advances 2, 032123 (2012)
Analysis of the spectra of trivalent erbium in multiple sites of hexagonal aluminum nitride
John B. Gruber, Ulrich Vetter, Gary W. Burdick, Zackery D. Fleischman, Larry D. Merkle, Takashi Taniguchi, Yuan Xiaoli, Takashi Sekiguchi, Daniel Jürgens, and Hans Hofsäss, Optical Materials Express 2 (2012) 1186
Crystal field and Zeeman splittings for energy levels of Nd3+ in hexagonal AlN
John B. Gruber, Gary W. Burdick, Ulrich Vetter, Brian Mitchell, Volkmar Dierolf, Hans Hofsäss, Optical Materials Express 2 (2012) 1176
Ion beam induced surface patterns due to mass redistribution and curvature dependent sputtering
Omar Bobes, Kun Zhang and Hans Hofsäss, 2012, Phys. Rev B 86 (2012) 235414
Nano-hillock formation in diamond-like carbon induced by swift heavy projectiles in the electronic stopping regime: experiments and atomistic simulations
D. Schwen,E. Bringa, J. Krauser, A. Weidinger, C. Trautmann,and H. Hofsäss, Appl. Phys. Lett. 101 (2012) 113115

Publications 2011

Electric fie3ld gradient of 111In/111Cd atoms at A-lattice sites in 211-MAX phases
D. Jürgens, C. Brüsewitz, H.-G. Gehkre, H. Hofsäss, M. Nagl, M. Uhrmacher, U. Vetter, J. Mestnik-Filho, M.W. Barsoum, J Phys. C: cond. mat. 23 (2011) 505501
Tuning the conductivity of vanadium dioxide on silicon by swift heavy ion irradiation
H. Hofsäss, P. Ehrhardt, H.-G. Gehrke, M. Brötzman, U.Vetter, K.Zhang, J. Krauser, C.Trautmann, C. Ko, S. Ramanathan, AIP Advances 1 (2011) 032168
Conductive ion tracks in tetrahedral amorphous carbon by 30 MeV C60 irradiation
J. Krauser, A.-K. Nix, H.-G. Gehrke, H. Hofsäss, C. Trautmann, A. Weidinger, New Journal of Physics 13 (2011) 083023
Thickness dependence of the magnetic properties of ripple-patterned Fe/MgO(001) films
F. Büttner, K. Zhang, H. Hofsäss, S. Seyffarth, T. Liese, H.-U. Krebs, C. Vaz, Phys. Rev. B 84 (2011) 064427
Spectroscopic analysis of Eu3+ in single-crystal hexagonal phase AlN
J. B. Gruber, U. Vetter, T. Taniguchi, G. W. Burdick, H. Hofsäss, S. Chandra, and D. K. Sardar, J. Appl Phys. 110 (2011) 023104
First results of ab initio simulations of scintillation detector characteristics
A. Krille, M. Nagl, U. Vetter, H. Hofsäss and R. Krause-Rehberg, J. Phys.: Conference Series 262 (2011) 012033
Surfactant driven self-organized surface patterns by ion beam erosion
K. Zhang, M. Brötzmann, H. Hofsäss, New. Journal of Physics 13 (2011) 013033
Effective redution of AlN defect luminescence by ion implantation of light elements
Ulrich Vetter, Sven Müller, Marc Brötzmann, and Hans Hofsäss, Diam. Relat. Mater. 20 (2011) 782
Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay
M. Novakovic, K. Zhang, M. Popovic, N. Bibic, H. Hofsäss, K.P. Lieb, Nucl. Instr. Meth B 269 (2011) 881

Publications 2010

Modeling the diode characteristics of boron nitride/silicon carbide heterojunctions
M. Brötzmann, H.-G. Gehrke, U. Vetter, and H. Hofsäss, Appl. Phys. Lett. 97 (2010) 103505
A new all-digital time differential g-g angular correlation spectrometer
M. Nagl, U. Vetter, M. Uhmacher, H. Hofsäss, Rev. Sci. Instr. 81(2010) 073501
Bimodal range distributions of low-energy carbon ions in tetrahedral amorphous carbon
P. Neumaier, A. Bergmaier, W. Eckstein, R. Fischer, H. Hofsäss, H. U. Jäger, H. Kröger, C. Ronning and G. Dollinger, Europhys. Lett. 90 (2010) 46002
Nanoscale metal-silicide films prepared by surfactant sputtering and analyzed by RBS
K. Zhang, H. Hofsäss, and H. Zutz , Nucl. Instr. Meth. B 268 (2010) 1967
Perturbed angular correlation studies of the MAX phases Ti2AlN and Cr2GeC using ion implanted 111In as probe nuclei
D. Jürgens, M. Uhrmacher, H. Hofsäss, Jose Mestnik-Filho, M. Barsoum, Nucl. Instr. Meth. B 268 (2010) 2185
Self-Aligned Nanostructures Created by Swift Heavy Ion Irradiation
H. G. Gehrke, A. K. Nix, J. Krauser, C. Trautmann, A. Weidinger and H. Hofsäss, J. Appl. Phys. 107 (2010) 094305

Publications 2009

ta-C hetero junction diodes with apparent large ideality factors
M. Brötzmann, U. Vetter, H. Hofsäss, Phys. Stat Sol C 7 (2010) 256
p-type conduction in beryllium-implanted hexagonal boron nitride films
B. He, W. J. Zhang,_ Z. Q. Yao, Y. M. Chong, Y. Yang, Q. Ye, X. J. Pan, J. A. Zapien, I. Bello, S. T. Lee, I. Gerhards, H. Zutz, and H. Hofsäss, Appl. Phys. Lett. 95 (2009) 252106
A Search for Magnetic Effects in Ion Implanted ZnO and SiC
K. Bharuth-Ram, T. B. Doyle, H. Hofsäss, S. Müller, C. Ronning, AIP Conf. Proc. 1194 (2009) 80
Ion Solid Interaction
H. Hofsäss, in: Ion Beam, Photon and Hyperfine Methods in Nano-Structured Materials, Erasmus Intensive Programme 2009, (edition winterwork, Grimma, 2009) pp. 107-139 ISBN 978-3-940167-94-1
BN/ZnO hetero junction diodes with apparent giant ideality factors
M. Brötzmann, U. Vetter, H. Hofsäss, J. Appl. Phys. 106 (2009) 063704
Structure and Defects of Epitaxial Si (111) Layers on Y2O3(111)/Si(111) Support Systems
C. Borschel, C. Ronning, H. Hofsäss, A. Giussani, P. Zaumseil, C. Wenger, and T. Schroeder, JVST 27 (2009) 305
Fundamentals of Surfactant Sputtering
H. Hofsäss and K. Zhang, Nucl. Instr. Meth. B 267 (2009) 2731
Self-organized formation of layered carbon-copper nanocomposite films by ion deposition
H. Zutz, D. Lyzwa, C.Ronning, M. Seibt and H. Hofsäss, Nucl. Instr. Meth. B 267 (2009) 1356
Nanostructured carbide surfaces prepared by surfactant sputtering
H. Hofsäss, K. Zhang and H. Zutz, Nucl. Instr. Meth. B 267 (2009) 1398
Simulation and Fitting of High Resolution Rutherford Backscattering Spectra
C. Borschel, M. Schnell, C. Ronning and H. Hofsäss, Nucl. Instr. Meth. B 267 (2009)1737
Track etched Nanopores in spin-coated polycarbonate films applied as sputtering mask
A.-K. Nix, H.-G. Gehrke, J. Krauser, C. Trautmann, A. Weidinger, H. Hofsäss, Nucl. Instr. Meth B 267 (2009) 1032
Morphology of Si surface sputter-eroded by low-energy Xe-ions at glancing incident angle
H. Hofsäss, K. Zhang, F. Rotter, M. Uhrmacher, C. Ronning, J. Krauser, Surf. Coat. Technol. 203 (2009) 2395

Publications 2008

Ion track lithography and graphitic nanowires in diamond-like carbon
J. Krauser, A.-K. Nix, H.-G. Gehrke, H. Hofsäss, C. Trautmann, A. Weidinger, F. Wünsch, J. Bruns, J. Vac. Sci Technol 26 (2008) 2468
Comparative study of self-assembling of multilayers using reactive sputter deposition and mass selective ion beam deposition
Wan-Yu Wu, Jyh-Ming Ting, H. Zutz, D. Lyzwa, I. Gerhards, C. Ronning, H. Hofsäss, Diam. Relat. Mater. 17 (2008) 1494
Surfactant Sputtering
H. Hofsäss and K. Zhang, Appl. Phys. A: Materials Science and Processing 92 (2008) 517
Magnetic texturing of ferromagnetic thin films by sputtering induced ripple formation
K. Zhang, M. Uhrmacher, J. Krauser, H. Hofsäss, J. Appl. Phys. 103 (2008) 083507
Electric field gradients at 151Eu sites in GaN
K. Bharuth-Ram, H. Hofsäss and C. Ronning, Hyp. Int. 184 (2008) 213
Actual concepts of digital PAC spectroscopy
J. Röder, C. Herden, J.A. Gardner, K.-D. Becker, M. Uhrmacher, H. Hofsäss, Hyp. Int. 181 (2008) 131-139
Ion tracks for Nanotechnology
J. Krauser, H. Hofsäss, C. Trautmann, A. Weidinger, Festschrift "15 Jahre Hochschule Harz", Herausgeber Hochschule Harz, Verlag Koch, Halberstadt, März 2008, Seite 78-86, ISBN978-3-00-022117-0

Publications 2007

First PAC Experiments in MAX-Phases
D. Jürgens, M. Uhrmacher, H. Hofsäss, J. Röder, P. Wodniecki, A. Kulinska, M. Barsoum, Hyp. Int. 178 (2007) 23-30
Method and Apparatus for Surface Treatment by Combined Particle Irradiation
H. Hofsäss and K. Zhang, US provisional patent application 61/017,319, Dec. 2007
Self-organized nanoscale multilayer growth during the deposition of hyperthermal species
H. Zutz, I. Gerhards, C. Ronning, H. Hofsäss, M. Seibt, W.Y. Wu, J.-M. Ting, Rev. Adv. Mat. Sci. 15 (2007) 241
Ion induced nanoscale surface ripples on ferromagnetic thin films with correlated magnetic texture
K. Zhang, F. Rotter, M. Uhrmacher, C. Ronning, H. Hofsäss, J. Krauser, New J. Phys. 9 (2007) 29
X-ray absorption studies on cubic boron nitride thin films
X. T. Zhou, T. K. Sham, W. J. Zhang, C. Y. Chan, I. Bello, S. T. Lee, H. Hofsäss, J. Appl. Phys. 101 (2007) 013710
Unambiguous identification of the PL-I9-line in zinc oxide
S. Müller, D. Stichtenoth, M. Uhrmacher, H. Hofsäss, C. Ronning, A. Kulinska, J. Röder, Appl. Phys. Lett. 90 (2007) 012107
Morphological change of carbon surfaces by sputter erosion
K. Takahiro, K. Zhang, F. Rotter, D. Schwen, C. Ronning, H. Hofsäss, J. Krauser, Nucl. Instr. Meth B 256 (2007) 378
Pattern formation by Sputter erosion of Si- and C-surfaces
K. Zhang, F. Rotter, M. Uhrmacher, C. Ronning,, H. Hofsäss, J. Krauser, Surf. Coat. Technol. 201 (2007) 8299
Sputter erosion of ferromagnetic thin films
H. Hofsäss, F. Rotter, M. Uhrmacher, K. Zhang, C. Ronning, J. Krauser, Surf. Coat. Technol. 201 (2007) 8477
Electronic Properties of Graphite-Like Ion Tracks in Insulating Tetrahedral Amorphous Carbon
Anne-Katrin Nix, Daniel Schwen, Carsten Ronning, Johann Krauser, Christina Trautmann and Hans Hofsäss, Rev. Adv. Mater. Sci. 15 (2007) 192

Publications 2006

Swift heavy ion irradiation for recovery from implantation defects in GaN
A.-K. Nix, H. Höfsäss, S. Müller, C. Ronning, A. Kamarou, E. Wendler, W. Wesch, C. Trautmann , GSI Scientific Report 2006 (ISSN: 0174-0814), Materials-11, p.319
Crystal field analysis of Pm3+ (4f4) and Sm3+ (4f5) and lattice location studies of 147Nd and 147Pm in w-AlN
U. Vetter, J.B. Gruber, A.S. Nijjar, B. Zandi, G. Öhl, U. Wahl, B. de Vries, H. Hofsäss, M. Dietrich, ISOLDE Collaboration , Phys. Rev. B 74 (2006) 205201
Cubic phase content and structure of BN films from X-ray absorption study
X. T. Zhou, T. K. Sham, W. J. Zhang, C. Y. Chan, I. Bello, S. T. Lee, H. Hofsäss, Analytical Chemistry A 78 (2006) 6314
Effect of substrate surface on the structure and electronic properties of cubic boron nitride films
X. T. Zhou, T. K. Sham, C. Y. Chan, W.J. Zhang, I. Bello, S. T. Lee, H. Hofsäss, J. Appl. Phys. 100 (2006) 014909
Luminescence Centers in silica nanowires
N. G. Shang, U. Vetter, I. Gerhards, H. Hofsäss and M. Seibt, Nanotechnology 17 (2006) 3215
Conductive Nanoscopic Ion-Tracks in Diamond-Like-Carbon
J.-H. Zollondz, D. Schwen, A.-K. Nix, C. Trautmann, J. Berthold, J. Krauser, H. Hofsäss, Mat. Sci. Eng. C 26 (2006) 1171-1174
Preferable orientation of turbostratic BN basal planes from an X-ray absorption study
X. T. Zhou, T. K. Sham, C. Y. Chan, W. J. Zhang, I. Bello, S. T. Lee, F. Heigl, A. Jürgenen, H. Hofsäss, J. Mat. Res. 21 (2006) 147-152
Self-assembled nano-scale multilayer formation using physical vapor deposition methods
C. Ronning, I. Gerhards, M. Seibt, H. Hofsäss, W.Y. Wu, J. M. Ting, Nucl. Instr. Meth. 242 (2006) 261-264
The effect of substrate surface roughness on the nucleation of cubic boron nitride films
C.Y. Chan, S. Eyhusen, X.M. Meng, I. Bello, S.T. Lee, C. Ronning and H. Hofsäss, Diam. Relat. Mater. 15 (2006) 55-60

Publications 2005

Sputter erosion of ferromagnetic thin films
F. Rotter, K. Takahiro, K. Zhang, M. Uhrmacher, J. Krauser, H. Hofsäss, SMMIB2005, to be published
Pattern formation by Sputter erosion of Si- and C-surfaces
F. Rotter, K. Takahiro, K. Zhang, M. Uhrmacher, J. Krauser, H. Hofsäss, SMMIB2005, to be published
Kubisches Bornitrid ? Die bessere Alternative zu Diamant
in ?Wissenschaftsmagazin GEORGIA AUGUSTA?, Präsident der Universität Göttingen in Zusammenarbeit mit dem Universitätsbund Göttingen e.V. (Ed.), (Rothe Graphik, Georgsmarienhütte, 2005) ISSN 0016-8157, submitted
Cubic boron nitride thin film growth by boron and nitrogen ion implantation
S. Eyhusen, C. Ronning, and H. Hofsäss, Phys. Rev. B (2005) in print.
Self-assembled nano-scale multilayer formation using physical vapor deposition methods
C. Ronning, I. Gerhards, M. Seibt, H. Hofsäss, W.Y. Wu, J. M. Ting, IBMM2004, Nucl. Instr. Meth., in print
The effect of surface roughness on the phase purity of cubic boron nitride films
C.Y. Chan, S. Eyhusen, X.M. Meng, I. Bello, S.T. Lee, C. Ronning and H. Hofsäss, Diam. Relat. Mater. (2005) in print
Range distributions of low-energy carbon ions as a base for subplantation growth models
P. Neumaier, G. Dollinger, A. Bergmaier, W. Eckstein, R. Fischer, L. Görgens, H. Hofsäss, H. U. Jäger, H. Kröger, C. Ronning, Nature Materials (2004) submitted
EELS and XPS Studies on the Stucture of Carbon Materials Amorphized By Ion Irradiation
K. Takahiro, Daniel Schwen, Carsten Ronning, Hans Hofsäss, SMMIB2005, to be published
Conductive Nanoscopic Ion-Tracks in Diamond-Like-Carbon
J.-H. Zollondz, D. Schwen, A.-K. Nix, C. Trautmann, J. Berthold, J. Krauser, H. Hofsäss, EMRS-2005, to be published
Ion accelerator facilities at the University Göttingen
M. Uhrmacher and H. Hofsäss, ECAART-2004, Nucl. Instr. Meth. B, in print
Nucleation Mechanism of the Seed of Tetrapod ZnO Nanostructures
C. Ronning, N. G. Shang, I. Gerhards, H. Hofsäss and M. Seibt, J. Appl. Phys 98 (2005) 034307
Cubic phase content and structure of BN films from X-ray absorption study
X. T. Zhou, T. K. Sham, W. J. Zhang, C. Y. Chan, I. Bello, S. T. Lee, H. Hofsäss, J. Appl. Phys. (2005) to be published
Preferable orientation of turbostratic BN basal planes from an X-ray absorption study
X. T. Zhou, T. K. Sham, C. Y. Chan, W. J. Zhanga), I. Bello, S. T. Lee, F. Heigl, A. Jürgenenn, H. Hofsäss, J. Appl. Phys. (2005) submitted
Effect of substrate surface on the structure and electronic properties of cubic boron nitride film
X. T. Zhou, T. K. Sham, C. Y. Chan, W.J. Zhang, I. Bello, S. T. Lee, H. Hofsäss, J. Appl. Phys. (2005) submitted
Miss MaRPel ? a 3 MV pelletron accelerator for hydrogen depth profiling
M. Uhrmacher and H. Hofsäss, J. Alloys and compounds (2005), in print
Electron Emission Channeling: Electron microscopy upside-down
H. Hofsäss, in: Microstrcture Analysis in the Materials Science, Freiberger Forschungshefte B331 Werkstoffwissenschaft, D. Rafaja, S. Unterricker, R. Kleeberg (Hrsg.), (Technische Universität Bergakademie Freiberg, 2005) p.4 ; ISBN 3 86012-256-8

Publications 2004

Ion Beam Deposition of Thin Films: Growth Processes and Nanostructure Formation
H. Hofsäss, Invited Lecture, Symposium on the Physics of Ionoized Gases, SPIG-2004, Tara, Serbia & Montenegro, AIP Conference Proceedings 740 (2004) 101-116
On the Mechanisms of Cubic Boron Nitride Film Growth
H. Hofsäss, S. Eyhusen and C. Ronning, Diam. Relat. Mater. 13 (2004) 1103-1110
Self-organized Nanoscale Multilayer Growth in Hyperthermal Ion Deposition
I. Gerhards, H. Stillrich, C. Ronning, H. Hofsäss and M. Seibt, Phys. Rev. B 70 (2004) 245418
Field emission studies on swift heavy ion irradiated tetrahedral amorphous carbon
D. Schwen, C. Ronning, H. Hofsäss, H. Zollondz, A. Weidinger, C. Trautmann, Diam. Relat. Mater. 13 (2004) 1032
The role of ion energy on the growth mechanism of cubic boron nitride films
S. Eyhusen, C. Ronning, and H. Hofsäss, Thin Solid Films 447-448 (2004) 125
Visible cathodoluminescence from Eu-implanted single and polycrystal c-BN annealed under high temperature, high pressure conditions.
U. Vetter, H. Hofsäss, T. Taniguchi, Appl. Phys. Lett. 84 (2004) 4286
Lithium insertion into In2S3 studied by perturbed gg-angular correlation
A. Kulinska, M. Uhrmacher, R. Dedryvère, A. Lohstroh, H. Hofsäss, K. P. Lieb, A. Picard-Garcia, J.-C. Jumas, J. Solid State Chem. 177 (2004) 109
Spectra and energy levels of Gd3+(4f7) in AlN.
J.B. Gruber, U. Vetter, H. Hofsäss, B. Zhandi, M.F. Reid, Phys. Rev. B 69 (2004) 195202.
Cathodoluminescence versus dynamical epitaxy of Ba-ion implanted quartz
S. Dhar, S. Gasiorek, P. Sahoo, U. Vetter, H. Hofsäss, V.N. Kulkarni, K.P. Lieb, Appl. Phys. Lett. 85 (2004) 1341

Publications 2003

Quantenpunkt aus elektrisch leitendem Kohlenstoff,Verfahren zur Herstellung und Anwendung
A. Weidinger, J.-H. Zollondz, J. Krauser, B. Mertesacker, H. Hofsäss, Deutsches Patent Nr. 103 06 076 vom 08.02.2003
Erforschung kondensierter Materie mit nuklearen Sonden und Ionenstrahlen an Großforschungsanlagen in Deutschland : Status und Perspektiven
Herausgeber: Komitee für Forschung mit nuklearen Sonden und Ionenstrahlen (Vorsitzender: H. Hofsäss), FORMAT Druck und Satz, Berlin, 2003, ISBN 3-00-011634-5
Physik mit Ionenstrahlen : innovative Forschung in Deutschland
Herausgeber: H. Hofsäss, C. Ronning, W. Möller, H. Homeier, B. Stritzker, J. Lindner, Druckhaus Fromm, Osnabrück, 2003
Diffusion in diamond-like carbon
H. Kröger, C. Ronning, H. Hofsäss, P. Neumaier, A. Bergmaier, L. Görgens, G. Dollinger, Diam. Relat. Mater. 12 (2003) 2042
Phase formation of boron nitride thin films under the influence of impurity atoms
C. Ronning, S. Eyhusen, H. Hofsäss, Diam. Relat. Mater. 12 (2003) 1173
Conductivity of ion tracks in diamond-like carbon films
J.-H. Zollondz, J. Krauser, A.Weidinger, C. Trautmann, D. Schwen, C. Ronning, H. Hofsäss, B. Schultrich, Diam. Relat. Mater. 12 (2003) 938
Europium doping of c-BN and ta-C thin films
U. Vetter, P.Reinke, C. Ronning, H. Hofsäss, P. Schaaf, K. Baruth-Ram, T. Taniguchi, Diam. Relat. Mater. 12 (2003) 1182
Field Emission enhancement by nano-scale channels through ta-C layers
N. Koenigsfeld, H. Hofsass, D. Schwen, R. Kalish, A. Weidinger,C. Trautmann, Diam. Relat. Mater. 12 (2003) 469
Ion beam Synthesis of diamondlike carbon thin films containing copper nanocrystals
I. Gerhards, C. Ronning, H. Hofsäss, M. Seibt, H. Gibhardt, J. Appl. Phys. 93 (2003) 1203
Ion energy thresholds and stability of cubic boron nitride
S. Eyhusen, I. Gerhards, H. Hofsäss, C. Ronning, M. Blomenhofer, J. Zweck, M. Seibt, Diam. Relat. Mater. 12 (2003) 1877
Intense ultra violet cathodoluminescence at 318 nm from Gd3+ - doped AlN
U. Vetter, J. Zenneck and H. Hofsäss, Appl. Phys. Lett. 83 (2003) 2145
Lanthanide Doped Cubic Boron Nitride
U. Vetter, T. Taniguchi, U. Wahl, J. Correia, A. Müller, C.Ronning, H. Hofsäss, M. Dietrich and ISOLDE Collaboration, MRS Symp Proc. Vol. 744 (2003) M 8.38
Lattice Location and Cathodoluminescence Studies of Ytterbium/Thulium Implanted 2H-Aluminium Nitride
U. Vetter, M.F. Reid, H. Hofsäss, J. Zenneck, C. Ronning, M. Dietrich, MRS Symp Proc. "GaN and Related Alloys", MRS Symp. Proc. Vol. 743 (2003) L 6.16
Electron emission channeling spectroscopy using X-ray CCD detectors
H. Hofsäss, U. Vetter, C. Ronning, M. Uhrmacher, K. Bharuth-Ram, R. Hartmann, and L. Strüder, Nucl. Instr. Meth. A 512 (2003) 378
Lattice location studies of rare earth impurities in 3C-, 4H- and 6H-SiC
U. Vetter, H. Hofsäss, U. Wahl, M. Dietrich and ISOLDE Collaboration, Diam. Relat. Mater. 12 (2003) 1883

Publications 2002

Comment on "On the mechanism of the cubic phase formation in the boron nitride thin-film systems" [Appl. Phys. Lett. 79, 353 (2001)]
C. Ronning and H. Hofsäss, Appl. Phys. Lett. 80 (2002) 1306
Surface Brillouin Scattering of c-BN Films
P. Zinin, M.H. Manghnani, X. Zhang, H. Feldermann, C. Ronning, H. Hofsäss, J. Appl. Phys. 91 (2002) 4196
Fundamental role of ion bombardment for the synthesis of cubic boron nitride films
H. Hofsäss, H. Feldermann, S. Eyhusen, C. Ronning, Phys. Rev. B. 65 (2002) 115410
Ion beam synthesis of amorphous boron carbide thin films
M. Büttner, O. Wondratschek, C. Ronning, U. Vetter and H. Hofsäss, Surf. Coat. Technol. 158/159 (2002) 382
Ion beam synthesis of amorphous carbon thin films containing metallic nanoclusters
I. Gerhards, C. Ronning, U. Vetter and H. Hofsäss, F. Au, Q. Li and S.T. Lee, Surf. Coat. Technol. 158/159 (2002) 114
Lattice site location of ion implanted 8Li in Silicon Carbide
S.Virdis, U.Vetter, C. Ronning, H. Kröger and H. Hofsäss, J. Appl. Phys. 91 (2002) 1046
Implantation sites of Ce and Gd in diamond
K. Bharuth-Ram, U. Vetter, H. Hofsäss, C. Ronning and M. Dietrich, Nucl. Instr. Meth. B 190 (2002) 835

Publications 2000

Growth, doping and applications of c-BN thin films
C. Ronning, H. Feldermann, H. Hofsäss, Diam. Relat. Mater. 9 (2000) 1767-1773
Hydrogen-plasma etching of ion beam deposited c-BN films: an in-situ invesitgation of the surface with electron spectroscopy
P. Reinke, P. Oelhafen, H. Feldermann, C. Ronning, and H. Hofsäss, J. Appl. Phys. 88 (2000) 5597
Ripple topography of ion-beam-eroded graphite: A key to ion-beam-induced damage tracks
S. Habenicht, W. Bolse, H. Feldermann, U. Geyer, H. Hofsäss, K.P. Lieb, and F. Roccaforte, Europhys. Lett. 50 (2000) 209-215
Characterization of Superhard Materials and Thin Films by Surface Brillouin Scattering
X. Zhang, M.H. Manghnani, P. Zinin, H. Feldermann, C. Ronning, H. Hofsäss, I.A. Trojan, A.G. Lyapin, V.V. Brazhkin, W. Rafaniello, Proc. Int. Conf. Science and Technology of high Pressure AIRAPT-17,, M.H. Manghnani, W.J. Nellis, M.F. Nicol (eds.), Science and Technology of High Pressure 2 (2000) 941-944
Properties of Ion Beam Deposited Tetrahedral Fluorinated Amorphous Carbon Films (ta-C:F)
C. Ronning, R. Merk, H. Feldermann, F. Harbsmeier, H. Hofsäss, in "Amorphous Carbon and Nanostrucutred Carbon", T. Allen, B.F. Coll, J. Robertson, J.P. Sullivan (eds.), MRS Symp. Proc. Vol. 593 (2000)
Photoluminescence characterization of Mg implanted GaN
C. Ronning, H. Hofsäss, A. Stötzler, M. Deicher, E.P. Carlson, P.J. Hartlieb, T. Gehrke, P. Rajagopal, R.F. Davis, MRS Internet J. Nitride Semicond. Res. 5S1, W11.44 (2000).
Ion implanted impurities in GaN and AlN: lattice sites, annealing behavior and defect recovery
C. Ronning, M. Dalmer, M. Uhrmacher, M. Restle, U. Vetter, L. Ziegeler, H. Hofsäss, T. Gehrke, K. Järrendahl, R.F. Davis, J. Appl. Phys. 87 (2000) 2149

Publications until 1999

Herstellungsverfahren für eine mikromechanische Vorrichtung
H. Hofsäss, J. Boneberg, P. Leiderer, Deutsches Patent Nr. 197 52 202.5-09 vom 25.11.1997
Synthesis and Properties of Cubic Boron Nitride Thin Films
H. Feldermann, M. Sebastian, R. Merk, M. Restle, C. Ronning and H. Hofsäss, in Hard Coatings Based on Borides, Carbides &Nitrides, A. Kumar, Y.Chung, R.W.J. Chia (eds.), (TMS Minerals Metals and Materials Society, Warrendale, 1998), p.143
Electronic Properties of Undoped and Doped Tetrahedral Amorphous Carbon
H. Hofsäss, in Proceedings of First Specialist Meeting on Amorphous Carbon (SMAC 97), eds. S.R.P. Silva, J. Robertson, W.I. Milne, G.A.J. Amaratunga (World Scientific, Singapore, 1998) p. 296
Cylindrical Spike Model for the Formation of Diamondlike Thin Films by Ion Deposition
H. Hofsäss, C. Ronning, M. Sebastian and H. Feldermann, Appl. Phys. A 66 (1998) 153-182
Ion Beam Deposition and Doping of Diamondlike Materials
H. Hofsäss and C. Ronning, in: "Proc. 2nd Int. Conf. on Beam Processing of Advanced Materias"l, eds. J. Singh, S. M. Copley, J. Mazumder, (ASM Int., Materials Park, 1996) p. 29-56
Mass Separated Ion Beam Deposition: a Unique Technique to Grow DLC, c-BN and CN Films
C. Ronning and H. Hofsäss, in Diamond Materials IV, Proc. 4th Int. Symposium, eds. K.V. Ravi, J.P. Dismukes, (The Electrochemical Society, Pennington, 1995) 359-364
Elastic Properties of Hard c-BN Films by Surface Brillouin Scattering
M.H. Manghnani, X. Zhang, S. Tkachev, P. Zinin, H. Feldermann, C. Ronning, H. Hofsäss, A.G. Every, in Nondestructive Characterization of Materials IX, R.E. Geern, Jr. (ed.), AIP Conf. Proc. 497 (1999) 315
Electrically Conducting Ion Tracks in Diamond-like Carbon Films for Field Emission
M. Waiblinger, Ch. Sommerhalter, B. Pietzak, J. Krauser, B. Mertesacker, M. Ch. Lux-Steiner, S. Klaumünzer, A. Weidinger, C. Ronning, H. Hofsäss, Appl. Phys. A. 69 (1999) 239
Room Temperature Growth of Cubic Boron Nitride
H. Feldermann, R. Merk, H. Hofsäss, C. Ronning and T. Zheleva, Appl. Phys. Lett. 74 (1999) 1552
Modelling of the Ion Beam Deposition Process of Covalently Bonded Diamondlike Materials
H.C. Hofsäss, M. Sebastian, R. Merk, C. Ronning and H. Feldermann, Mat. Res. Soc. Symp. Proc. Vol. 498 (1998) 129
Carbon nitride deposited using energetic species: A review on XPS studies
C. Ronning, H. Feldermann, R. Merk, H. Hofsäss, P. Reinke and J.-U. Thiele, Phys. Rev. B58 (1998) 2207-2215
Carbon Transport in Si (001) and Nucleation of Diamond-like Carbon Layers During Mass Selected Ion Beam Deposition
S. Christiansen, M. Albrecht, H.P. Strunk, H. Hofsäss, C. Ronning and E. Recknagel, Diam. Relat. Mater 7 (1998) 15
Thresholds for the Phase Formation of Cubic Boron Nitride Thin Films
H. Hofsäss, H. Feldermann, M. Sebastian and C. Ronning, Phys. Rev. B 55 (1997) 13230
Quantitative Analysis of Chemically-Enhanced Sputtering During Ion Beam Deposition of Carbon Nitride Thin Films
H. Hofsäss, C. Ronning, H. Feldermann, M. Sebastian, Mat. Res. Soc. Symp. Proc. 438 (1997) 575-580
Thin Film Growth of Group III Nitrides by Mass Separated Ion Beam Deposition
C. Ronning, E. Dreher, H. Feldermann, M. Sebastian, J. Zweck, R. Fischer and H. Hofsäss, Mat. Res. Soc. Symp. Proc. 449 (1997) 331-336
Electrical Properties and Thermal Stability of Ion Beam Deposited BN Films
C. Ronning, M. Gross, E. Dreher, H. Feldermann and H. Hofsäss, Diam. Relat. Mater. 6 (1997) 1129-1134
Electronic Structure of Undoped and Doped ta-C Films
C. Ronning, E. Dreher, J.-U. Thiele, P. Oelhafen and H. Hofsäss, Diam. Relat. Mater. 6 (1997) 830-834
Electrical Characterization of pn and pin Diode Structures Made by Ion Beam Deposition of Doped Diamond-like Carbon
H. C. Hofsäss, C. Ronning, U. Griesmeier, M. Gross, A. Cedvall , E. Dreher and J. Biegel, in Applications of Diamond Films and Related Materials: Third International Conference, eds.: A. Feldman, Y. Tzeng, W.A. Yarbrough, M. Yoshikawa, M. Murakawa, NIST Special Publication 885 (1995) p.775-778
Cubic Boron Nitride Films Grown by Low Energy B+ and N+ Ion Beam Deposition
H. Hofsäss, C. Ronning, U. Griesmeier, M. Gross, S. Reinke, M. Kuhr, Appl. Phys. Lett. 67 (1995) 46-48
Characterization of Cubic Boron Nitride Films Grown by Mass Separated Ion Beam Deposition
H. Hofsäss, C. Ronning, U. Griesmeier, M. Gross, S. Reinke, M. Kuhr, J. Zweck, R. Fischer, Nucl. Instr. Meth. B 106 (1995) 153
Conduction Processes in Boron and Nitrogen Doped Diamond-like Carbon Films Prepared by Mass Separated Ion Beam Deposition
C. Ronning, U. Griesmeier, M. Gross, H. Hofsäss, R.G. Downing and G.P. Lamaze, Diam. Relat. Mater. 4 (1995) 666
CxN1-x Thin Films Prepared by Mass Separated Ion Beam Deposition
C. Ronning, U. Griesmeier, M. Gross, H. Hofsäss, in Beam-Solid Interactions for Materials Synthesis and Characterization, eds. D.E. Luzzi, T.F. Heinz, M. Iwaki, D.C. Jacobsen,
Mat. Res. Soc. Symp. Proc. Vol 354 (1995) 93
Characterization of Doped Diamondlike Carbon Films and Multilayers
H. Hofsäss, J. Biegel, C. Ronning, R.G. Downing, G.P. Lamaze, in Materials Synthesis and Processing Using Ion Beams , eds. R.J. Culbertson, K.S. Jones, O.W. Holland, K. Maex, Mat. Res. Soc. Symp. Proc. 316 (1994) 881
Doping and Growth of Diamond-like Carbon Films by Ion Beam Deposition
H. Hofsäss, H. Binder, T. Klumpp and E. Recknagel, Diam. Relat. Mater. 3 (1994) 137
Ion Implantation and Annealing of Diamond Studied by Emission Channeling and Cathodoluminescence
C. Ronning and H. Hofsäss, Diam. Relat. Mater. 8 (1999) 1623-1630
Emission Channeling
H. Hofsäss, Hyp. Int. 97/98 (1996) 247-283
Impurity Lattice Location and Recovery of Structural Defects in Semiconductors Studied by Emission Channeling
H. Hofsäss, U. Wahl and S. G. Jahn, Hyp. Int. 84 (1994) 27-41
Emission Channeling Studies in Semiconductors
H. Hofsäss, S. Winter, S. Jahn, U. Wahl, E. Recknagel,Nucl. Instr. Meth. B63 (1992) 83-90
Emission Channeling
S. Winter, H. Hofsäss, S.G. Jahn, G. Lindner, U. Wahl and E. Recknagel, in Hyperfine Interaction of Defects in Semiconductors, ed.: G. Langouche (Elsevier, Amsterdam, 1992) 157-185
Emission Channeling and Blocking
H. C. Hofsäss and G. Lindner, Physics Reports 201 (1991) 121-183
Lattice site and diffusion of ion-implanted Li in as-grown and Se-rich ZnSe
K. Bharuth-Ram, M. Restle, H. Hofsäss, C. Ronning, U. Wahl, and ISOLDE Collaboration Physica B 273 (1999) 875
Emission Channeling Studies of Defect Annealing in the Wide Band Gap Semiconductors ZnTe and ZnSe
K. Bharuth-Ram, H. Hofsäss, M. Restle, U. Wahl and the ISOLDE Collaboration, Nucl. Instr. Meth. B 156 (1999) 244
Li-Defect Reactions During Low Dose Ion Implantation of 8Li into ZnSe Single Crystals
M. Restle , M. Dalmer, U. Wahl, H. Hofsäss and ISOLDE Collaboration, MRS Symp. Proc. 540 (1999)
Combination of Emission Channeling, Photoluminescence and Mössbauer Spectroscopy to Identify Rare Earth Defect Complexes in Semiconductors
M. Dalmer , U. Vettera, M. Restle , A. Stötzler, H. Hofsäss , C. Ronning, V.V. Naicker, M.K. Moodley, K. Bharuth-Ram and the ISOLDE-Collaboration, Proc. 11th Int. Conf. on Hyperfine Interactions, Hyp. Int. 120/121 (1999) 347
Lattice Location and Luminescence Behavior of Rare Earth Elements Implanted in GaN
M. Dalmer, M. Restle, A. Stötzler, U. Vetter, H. Hofsäss, M.D. Bremser, C. Ronning, R.F. Davis and ISOLDE Collaboration, in "Nitride Semiconductors", S. DenBaars, B. Meyer, S. Nakamura, F. Ponce (eds.), MRS Proc. Vol. 482(1998) 1021-1026
Li Ion Implantation Studies in GaN
M. Dalmer, M. Restle, C. Ronning, M. Sebastian, U. Vetter, H. Hofsäss, M.D. Bremser, R.F. Davis, U. Wahl, K. Bharuth-Ram, and ISOLDE Collaboration, J. Appl. Phys. 84 (1998) 3085
Annealing Behaviour of ZnTe Investigated with 111mCd-Emission Channeling
K. Bharuth-Ram, M. Restle and H. Hofsäss, Nucl. Instr. Meth B 136 (1998) 751
Recovery of Structural Defects in GaN after Heavy Ion Implantation
C. Ronning, M. Dalmer, M. Deicher, M. Restle, M.D. Bremser, R.F. Davis and H. Hofsäss, MRS Symp. Proc. Vol. 468 (1997) 407-412
Perturbed Angular Correlation Measurements and Lattice Site Location of Br in GaAs
M. Wehner, M. Risse, R. Vianden, M. Dalmer, H. Hofsäss, M.C. Ridgeway, M. Petravic and ISOLDE Collaboration, Mater. Sci. For. 258-263 (1997) 899
Substitutional Phosphorous Doping of Diamond by Ion Implantation
H. Hofsäss, M. Dalmer, M. Restle and C. Ronning, J. Appl. Phys. 81 (1997) 2566
Behavior of the Potential n-Type Dopants P and As in Diamond After Low Dose Ion Implantation
H. Hofsäss, M. Dalmer, M. Restle, C. Ronning, K. Bharuth-Ram, H. Quintel and The ISOLDE-Collaboration, Mat. Res. Soc. Symp. Proc. Vol. 442 (1997) 675-680
Microscopic Studies of Implanted 73As in Diamond: g-e- PAC and Emission Channeling Measurements
J.G. Marques, E. Alves, D. Forkel-Wirth, S.G. Jahn, M. Restle, M. Dalmer, H. Hofsäss, K. Bharuth-Ram and ISOLDE Collaboration, Nucl. Instr. Meth. B 127/128 (1997) 723
Cathodoluminescence Studies of Ion Implanted Diamond
H. Sternschulte, T. Albrecht, K. Thonke, R. Sauer, M. Dalmer, C. Ronning and H. Hofsäss, Appl. Phys. Lett. 71 (1997) 2668
Ion implantation Doping of Diamond Studied by PAC
K. Bharuth-Ram, A. Burchard, M. Deicher, K. Freitag, H. Hofsäss, S.G. Jahn, R. Magerle, H. Quintel, M. Restle, C. Ronning and the ISOLDE Collaboration, Hyperfine Interactions (C) 1 (1996) 212
Thermal Stability of Substitutional Ag in CdTe and ZnSe
S.G. Jahn, H. Hofsäss, M. Restle, C. Ronning, H. Quintel, K. Bharuth-Ram and U. Wahl, and the ISOLDE Collaboration, J. Cryst. Growth 161 (1996) 172
Lattice Sites of Li in CdTe
M. Restle, K. Bharuth-Ram, H. Quintel, C. Ronning, H. Hofsäss, S.G. Jahn and U. Wahl, and the ISOLDE Collaboration, J. Cryst. Growth 161 (1996) 168-171
Alpha Emission Channeling Invesigations for Lattice Location of Li in Ge
U. Wahl, S.G. Jahn, M. Restle, H. Quintel, H. Hofsäss, Nucl. Instr. Meth B 118 (1996) 76-81
Emission Channeling Study of Annealing of Radiation Damage in Heavy-ion Implanted Diamond
H. Quintel, K. Bharuth-Ram, H. Hofsäss, M. Restle, C. Ronning, Nucl. Instr. Meth. B 118 (1996) 72-75
Amorphization of ZnSe by Ion Implantation at Low Temperatures
S.G. Jahn, H. Hofsäss, M. Restle, C. Ronning, H. Quintel, K. Bharuth-Ram, and the ISOLDE-Collaboration, in Ion Beam Modification of Materials, eds. J.S. Williams, R.G. Elliman, M.C. Ridgway, (Elsevier, Amsterdam, 1996) p. 907-911
Lattice Sites of Ion Implanted Li in Zn-rich ZnSe
S. G. Jahn, U. Wahl, M. Restle, H. Quintel, H. Hofsäss and M. Wienecke, Mat. Sci. For. 196-201, Part 1 (1995) 315-320
Lattice Sites of Li in Si and Ge
U. Wahl, S.G. Jahn, M. Restle, H. Quintel and H. Hofsäss, Mat. Sci. For. 196-201, Part 1 (1995) 115-120
Lattice Sites of Ion Implanted Li in Diamond
M. Restle, K. Bharuth-Ram, H. Quintel, C. Ronning, U. Wahl, S.G. Jahn and H. Hofsäss, Appl. Phys. Lett. 66 (1995) 2733
Lattice Sites of Arsenic Ions Implanted in Diamond
K. Bharuth-Ram, H. Quintel, M. Restle, C. Ronning, S.G. Jahn and H. Hofsäss, J. Appl. Phys. 78 (1995) 5180-5182
a-Emission Channeling Studies of the Lattice Site of Oversized Atoms Implanted in Fe and Ni Single Crystals
J. De Wachter, S. Blässer, H. Hofsäss, S. Jahn, M. Lindroos, R. Moons, H. Pattyn, M. Restle, A. Vantomme, U. Wahl, P. van Duppen, G. Langouche, Nucl. Instr. Meth. B 106 (1995) 23-27
Li on Bond-Center Sites in Si
U. Wahl, M. Restle, C. Ronning, H. Hofsäss, S.G. Jahn, Phys. Rev. B50 (1994) 2176
Lattice Sites of Ion Implanted Li in Indium-Antimonide
H. Hofsäss, U. Wahl, M. Restle, C. Ronning and E. Recknagel, Nucl. Instr. Meth. B85 (1994) 468
Lattice Location of Implants in Diamond by Conversion Electron Emission Channeling
E.J. Storbeck, S.H. Connell, J.P.F. Sellschop and H. Hofsäss, Nucl. Instr. Meth. B 85 (1994) 503
Direct Evidence for Substitutional Li after Ion Implantation into Highly Phosphorous-doped Si
U. Wahl, H.Hofsäss, S.G. Jahn, S. Winter and E. Recknagel, Appl. Phys. Lett. 62 (1993) 684
Lattice Location and Annealing Studies of Heavy Ion Implanted Diamond
H. Hofsäss, M. Restle, U. Wahl and E. Recknagel, Nucl. Instr. Meth. B80/81 (1993) 176
Microscopic Characterization of Heavy-ion Implanted Diamond
A. Burchard, M. Restle, M. Deicher, H. Hofsäss, S.G. Jahn, Th. König, R. Magerle, W. Pfeiffer and U. Wahl, Physica B 185 (1993) 150
Lattice Site Changes of Ion Implanted 8Li in Si Studied by Alpha Emission Channeling
U. Wahl, H. Hofsäss, S.G. Jahn, S. Winter, H. Hoffmann, E. Recknagel, Nucl. Instr. Meth. B63 (1992) 91
Lattice Location of Ion Implanted 8Li in InP Studied by Alpha Emission Channeling
U. Wahl, H. Hofsäss, S. Jahn, S. Winter, E. Recknagel, Nucl. Instr. Meth. B64 (1992) 221
Structural Defect Recovery in GaP after Heavy Ion Implantation
S.G. Jahn, H. Hofsäss, U. Wahl, S. Winter, E. Recknagel, Appl. Surf. Sci. 50 (1991) 169
Perturbed-Angular-Correlation Measurements of Trivalent Indium Defects in Silver Chloride
J.C. Austin, M.L. Swanson, W.C. Hughes, C.T. Kao, L.M. Slifkin, H.C. Hofsäss, E.C. Frey, Phys. Rev. B42 No. 13 (1990) 7699
Lattice Site Prevalence of Ion Implanted Li in GaAs
S. Winter, S. Blässer, H. Hofsäss, S. Jahn, G. Lindner, U. Wahl and E. Recknagel, in Defect Control in Semiconductors, ed: K. Sumino (Elsevier, 1990) p. 903
Lattice Location of Ion Implanted Radioactive Dopants in Compound Semiconductors
S. Winter, S. Blässer, H. Hofsäss, S. Jahn, G. Lindner, U. Wahl, E. Recknagel, Nucl. Instr. Meth. B48 (1990) 211
Annealing Behaviour of Compound Semiconductors After Ion Implantation Investigated by Emission-Channeling and Blocking
S.G. Jahn, H. Hofsäss, U. Wahl, S. Winter, E. Recknagel, Proceedings of XXV Zakopane School on Physics (Zakopane, Poland), Vol. 1: Condensed Matter Studies by Nuclear Methods, eds: J. Stanek, A.T. Pedziwiatr (World Scientific, Singapore, 1990) p. 331
Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes
S. Winter, S. Blässer, H. Hofsäss, S. Jahn, G. Lindner and E. Recknagel, Mat. Sci. For. 38-41 (1989) 1221
Site Changes of Ion-Implanted Li in GaAs below 300 K
G. Lindner, S. Winter, H. Hofsäss, S. Jahn, S. Blässer, E. Recknagel and G. Weyer, Phys. Rev. Lett. 63 No.2 (1989) 179
Localization of Impurity Atoms by Channeling of Electrons and Positrons
H. Hofsäss, G. Lindner, S. Winter and E. Recknagel, in Nuclear Physics Applications on Materials Science, eds. E. Recknagel and J.C. Soares, NATO ASI Series E: Applied Sciences Vol. 144 (Kluwer Academic Publishers, Dordrecht, 1988) p. 157
Lattice Location of Nuclear Probes by Electron and Positron Channeling
H. Hofsäss, B. Besold, G. Lindner, S. Winter, E. Recknagel and G. Weyer, in Relativistic Channeling , eds. R.A. Carrigan and J.A. Ellison, NATO ASI Series B: Physics Vol. 165 (Plenum Press, New York London, 1987) p. 483
Combined PAC and Electron-Channeling Studies of He-Defect-Interaction in Cu Between 300 and 900 K
H. Hofsäss, S. Winter. G. Lindner, M. Deicher, G. Grübel, Th. Wichert and E. Recknagel, Radiation Effects 103 (1987) 1-14
Electron-Positron-Channeling and Mössbauer-Effect Studies of Indium-Vacancy Complexes in Ion-Implanted Nickel
B. Besold, E. Danielsen, H. Hofsäss, G. Lindner, J.W. Petersen, E. Recknagel, M. Sondergaard, G. Weyer, S. Winter, eds.: H. Wollenberger and C. Abromeit, Mat. Sci. For. 15 - 18 (1987) 665
Direct Evidence for Substitutional Ion-Implanted Indium Dopants in Silicon
G. Lindner, H. Hofsäss, S. Winter, B. Besold, G. Weyer, E. Recknagel, and J.W. Petersen, Phys. Rev. Lett. 57 No.18 (1986) 2283
Localization of Implanted Radioactive Probes by Channeling of ß-, ß+ and Conversion Electrons
H. Hofsäss, G. Lindner, S. Winter, B. Besold, E. Recknagel and G. Weyer, Nucl. Instr. Meth. B13 (1986) 71-75
As-Implanted Lattice Sites of Dopants in Semiconductors
H. Hofsäss, G. Lindner, S. Winter, B. Besold, E. Recknagel, G. Weyer and J.W. Petersen, ed.: H.J. von Bardeleben , Mat. Sci. For. 10-12 (1986) 1183
Perturbed Angular Correlation and Rutherford Backscattering Studies in Indium Implanted Silicon
M. Deicher, G. Grübel, H. Hofsäss, E. Recknagel and Th. Wichert, Nucl. Instr. Meth. B15 (1986) 418-421
Channeling of Conversion Electrons from Radioactive Impurities for Analysis of Atomic Structures in Solids
H. Hofsäss, G. Lindner, E. Recknagel and Th. Wichert, Nucl. Instr. Meth. B2 (1984) 13-18
Microstructure Analysis by Channeling Using Nuclear Probes
G. Lindner, H. Hofsäss, E. Recknagel and Th. Wichert, in Microstructural Characterization of Materials by Non-Microscopical Techniques, eds. N. Hessel Andersen et. al. (Riso National Laboratory Roskilde, Denmark, 1984) p. 377
Detection of Vacancy Clustering by Combined PAC and Lattice Location Experiments
M. Deicher, H. Hofsäss, G. Lindner, E. Recknagel, Th. Wichert, M. L. Swanson, L. M. Howe and A. F. Quenneville, Hyp. Int. 15/16 (1983) 379
Probing of Lattice Defects by Radioactive Atoms
Th. Wichert, M. Deicher, G. Lindner, H. Hofsäss and E. Recknagel, Nucl. Instr. Meth. 218 (1983) 633
Conventional Recoil Spectrometry
J. Tirira, Y. Serruys, P. Trocellier and H. Hofsäss, in Forward Recoil Spectrometry: Applications to Hydrogen Determination in Solids, Chapter 5, J. Tirira, Y. Serruys and P. Trocellier (eds.), (Plenum Press, New York, 1996, ISBN 0-306-45249-9) p. 127-142
Coincidence Techniques
H. Hofsäss, J. Tirira, Y. Serruys and P. Trocellier, in Forward Recoil Spectrometry: Applications to Hydrogen Determination in Solids, Chapter 9, J. Tirira, Y. Serruys and P. Trocellier (eds.), (Plenum Press, New York, 1996, ISBN 0-306-45249-9) p.209-246
Elastic Recoil Coincidence Spectroscopy (ERCS)
H.C. Hofsäss, N.R. Parikh, M.L. Swanson and W.K. Chu, Nucl. Instr. Meth. B58 (1991) 49
Erratum to "Modeling detector response for neutron depth profiling" [NIM A 366 (1995) 137]
K.J. Coakley, R.G. Downing, G. Lamaze, H.C. Hofsäss, C. Ronning, J. Biegel, Nucl. Instr. Meth A 515, (2003) 892
High-Resolution elastic recoil detection utilizing Bayesian probability theory
P. Neumaier, G. Dollinger, A. Bergmeier, I. Genchev, L. Görgens, R. Fischer, V. Dose, C. Ronning, H. Hofsäss, Nucl. Instr. Meth. B 183 (2001) 48-61
High Sensitivity Depth Profiling of Light Elements Using Elastic Recoil Coincidence Spectroscopy (ERCS)
H. C. Hofsäss, N.R. Parikh, M.L. Swanson and W. K. Chu, Proc. of XXV Zakopane School on Physics (Zakopane, Poland), Vol. 1: Condensed Matter Studies by Nuclear Methods, eds: J. Stanek, A.T. Pedziwiatr (World Scientific, Singapore, 1990) p. 161
Depth Profiling of Light Elements using Elastic Recoil Coincidence Spectroscopy (ERCS)
H. C. Hofsäss, N. R. Parikh, M. L. Swanson, W. K. Chu, Nucl. Instr. Meth. B45 (1990) 151
Neutron Depth Profiling by Coincidence Spectrometry
N. R. Parikh, E. C. Frey, H. C. Hofsäss, M. L. Swanson, R.G. Downing, T. Z. Hossain, W. K. Chu, Nucl. Instr. Meth. B45 (1990) 70
Modeling Detector Response for Neutron Depth Profiling
K.J. Coakley, R.G. Downing, G. Lamaze, H. Hofsäss, C. Ronning and J. Biegel, Nucl. Instr. Meth. A 366 (1995) 137-144
Range Parameter Study of Au and Bi Implanted into Carbon Nitride Films
J. R. Kaschny, R. Pérez, M. Behar, H. Hofsäss and D. Fink, Nucl. Instr. Meth. B 122 (1997) 8-12
The Accident at Chernobyl: A Report on Risk Management at a Local Hot Spot in West Germany
M. Deicher, A. Ernst, H. Hofsäss, G. Lindner, E. Recknagel and C. Hohenemser, in New Risks Issues and Management, eds. L.A. Cox, Jr. and P. F. Ricci (Plenum Press, New York, 1990) p. 477 (Proceedings of the 1986 Annual
Meeting of the Society for Risk Analysis, Boston, USA 1986)
Radioaktive Kontamination in der Bodensee-Region als Folge des Tschernobyl-Reaktorunfalls
G. Lindner, M. Deicher, H. Hofsäss, S.G. Jahn, D. Petermann, W. Pfeiffer, U. Wahl and E. Recknagel, in Tagungsbericht Jahrestagung Kerntechnik 1987, ed.: Deutsches Atomforum (Bonn, 1987) p. 283
Chernobyl: An early Report
C. Hohenemser, M. Deicher, A. Ernst, H. Hofsäss, G. Lindner and E. Recknagel, Environment 28 (1986) 6 ; short reprint in Chemtech 16 (1986) 596
Agricultural Impact of Chernobyl: A Warning
C. Hohenemser, M. Deicher, H. Hofsäss, G. Lindner, E. Recknagel and J.I. Budnik, Nature 321 (1986) 817
Überregionale Aspekte der Tschernobyl-Radioaktivität im Bodensee-Gebiet
G. Lindner, M. Deicher, R. Eckmann, H. Hofsäss, S.G. Jahn, W. Müller, D. Petermann, W. Pfeiffer, S. Teufel, U. Wahl, S. Winter and E. Recknagel, in Radioaktivitätsmessungen in der Schweiz nach Tschernobyl und ihre wissenschaftliche Interpretation, eds.: L. André, E.J. Born and G. Fischer (Bern, 1986) p. 312